Acoustic wave resonator with integrated temperature control for oscillator purposes

ABSTRACT

The present invention relates to a resonator structure, temperature compensation method and temperature control apparatus for controlling local temperature of a resonator structure. At least one heating element ( 55 ) is integrated on a substrate of the resonator structure, and a temperature control signal generated based on a stored temperature characteristic is applied to the at least one integrated heating element ( 55 ). Thereby, the at least one heating element ( 55 ) and an optional integrated sensing element can be provided very close to the resonator. It is thus possible to control or calibrate variations of sensing elements, heating elements and resonator out from every sample.

CROSS REFERENCE TO RELATED APPLICATION

This application is a divisional of copending application Ser. No.11/221,656 filed on Sep. 7, 2005 and claims domestic priority under 35U.S.C. §120.

FIELD OF THE INVENTION

The present invention relates to a resonator structure integrated on asubstrate. In particular the present invention relates to film bulkacoustic wave resonator (FBAR) or surface acoustic wave (SAW) resonatorstructures.

BACKGROUND OF THE INVENTION

The development of mobile telecommunications continues towards eversmaller and increasingly complicated handheld units or mobile phones.The development has recently led to new requirements for handheld units,namely that the units should support several different standards andtelecommunications systems. Supporting several different systemsrequires several sets of filters and other radio frequency (RF)components in the RF parts of the handheld units. Despite thiscomplexity, the size of a handheld unit should not increase as a resultof such a wide support.

RF filters used in prior art mobile phones are usually discrete surfaceacoustic wave (SAW) or ceramic filters. This approach has been adequatefor single standard phones, but does not allow support of severaltelecommunications systems without increasing the size of a mobilephone.

Surface acoustic wave (SAW) resonators utilize surface acousticvibration modes of a solid surface, in which modes the vibration isconfined to the surface of the solid, decaying quickly away from thesurface. A SAW resonator typically comprises a piezoelectric layer andtwo electrodes. Various resonator structures such as filters areproduced with SAW resonators. A SAW resonator has the advantage ofhaving a very small size, but unfortunately cannot withstand high powerlevels.

It is known to construct thin film bulk acoustic wave (BAW) resonatorson semiconductor wafers, such as silicon (Si) or gallium arsenide (GaAs)wafers. For example, in an article entitled “Acoustic Bulk WaveComposite Resonators”, Applied Physics Letters, Vol. 38, No. 3, pp.125-127, Feb. 1, 1981, by K. M. Lakin and J. S. Wang, an acoustic bulkwave resonator is disclosed which comprises a thin film piezoelectriclayers of zinc oxide (ZnO) sputtered over a thin membrane of silicon(Si). Further, in an article entitled “An Air-Gap Type PiezoelectricComposite Thin Film Resonator”, 15 Proc. 39th Annual Symp. Freq.Control, pp. 361-366, 1985, by Hiroaki Satoh, Yasuo Ebata, HitoshiSuzuki, and Choji Narahara, a BAW resonator having a bridge structure isdisclosed. Examples of BAW resonator circuits are also disclosed inEP-A-0962999 and EP-A-0834989.

BAW resonators are not yet in widespread use, partly due to the reasonthat feasible ways of combining such resonators with other circuitryhave not been presented. However, BAW resonators have some advantages ascompared to SAW resonators. For example, BAW structures have a bettertolerance of high power levels.

FIG. 1 shows a cross section of a conventional BAW resonator isolatedfrom a substrate 30 (e.g. an Si-substrate) by an acoustic mirrorstructure 18. The BAW resonator comprises a bottom electrode BE, apiezoelectric layer or film 160, and a top electrode TE. The acousticalmirror structure 18 comprises in this example three layers. Two of thelayers are formed of a first material, and the third layer in betweenthe two layers is formed from a second material. The first and secondmaterials have different acoustical impedances. The order of thematerials can be different in different examples. In some examples, amaterial with a high acoustical impedance can be in the middle and amaterial with a low acoustical impedance on both sides of the middlematerial. In other examples, the order can be opposite. The bottomelectrode BE may in some embodiments function as one layer of theacoustical mirror.

In FIG. 1, the active part 16 of the BAW resonator is indicated by thedashed rectangle. This BAW resonator is based on an SMR (Solid MountedResonator) structure, where reflection is made by the mirror structure18 under the active part. The electronic characteristic between thebottom electrode BE and the substrate 30 can be represented by a bottomelectrode parasitic circuit BEP which comprises a series connection ofparasitic capacitors CoxM1 to CoxM3 at the acoustical mirror structure18, followed by a parallel circuit of a substrate resistor RsuM and asubstrate capacitor CsuM. Furthermore, resistors Rsb and Rst representohmic resistances of the respective conductor paths between the bottomelectrode BE and a bottom electrode terminal 24 and between the topelectrode TE and a top electrode terminal 22. The electroniccharacteristic between the top electrode TE and the substrate 30 can berepresented by a top electrode parasitic circuit TEP which comprises aseries connection of a parasitic capacitor CoxT and a parallel circuitof a substrate resistor RsuT and a substrate capacitor CsuT. Moreover, aparasitic capacitance Ctb is provided between the top electrode TE andthe bottom electrode BE. Thus, the electrodes of the conventional BAWresonator are slightly different because the bottom electrode BE hasmore parasitic capacitance than the top electrode TE.

The temperature drift of BAW resonators is approx. −20 ppm/° C. Theusable mobile temperature range is −30° C. to +85° C., so that frequencydrift could be as much as 2000 ppm respectively. If the center frequencyof oscillator is for example 1 GHz, then the drift will be 2.0 MHz.

Quite many implementations need more accurate frequency than referred toabove, such as for example in case of a reference oscillator adapted formobile use. Temperature compensation can be achieved, if the dependencyor relationship between frequency and temperature is well known.However, when a mobile phone is switched on, temperature and oscillatorfrequency are unknown parameters.

Document US2005/0110598A1 discloses a temperature-compensated FBARdevice, where an integrated temperature-compensating element having atemperature coefficient opposite in sign to the temperature coefficientof a piezoelectric element of the active part is provided fortemperature compensation purposes. Additionally, document U.S. Pat. No.6,710,508 B2 discloses an FBAR device in which resonant frequencies areadjusted by intentionally inducing oxidation at an elevated temperature.

Furthermore, different separate temperature control components, notintegrated with an acoustic resonator of an SAW oscillator to becompensated, are described in “Low Noise, Low Jitter Hybrid Ovenized SAWOscillators”, J. V. Adler et al, IEEE ULTRASONICS SYMPOSIUM, pp 25-28,2000.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide a resonatorstructure with improved frequency accuracy.

This object is achieved by a resonator structure integrated on asubstrate and comprising:

-   -   an acoustically active part;    -   first and second electrodes arranged on opposite sides of said        acoustically active part; and    -   at least one controllable heating element integrated on said        substrate, and configured to supply heat to said resonator        structure.

Furthermore, the above object is achieved by a temperature controlapparatus for controlling local temperature of a resonator structure,the apparatus comprising:

-   -   memory means for storing information about a temperature        characteristic of said resonator structure; and    -   control means for generating a temperature control signal based        on said stored information, and for applying said control signal        to an integrated heating element of said resonator structure.

Additionally, the above object is achieved by a method of compensatingtemperature variations in a resonator structure, the method comprisingthe steps of:

-   -   integrating at least one heating element on a substrate of the        resonator structure;    -   applying a temperature control signal to the at least one        integrated heating element to obtain a temperature        characteristic; and    -   storing the temperature characteristic of the resonator        structure.

Accordingly, at least one integrated heating element is provided on thesubstrate of the resonator structure, so that the heating element islocated very close to the resonator structure itself. The temperaturecontrol is thus quite accurate and variation of heating elements andresonator can be individually calibrated for every resonator sample.

The controllable heating element may be configured to be used as atemperature sensing element for sensing local temperature of theresonator structure. As an alternative or additional measure, at leastone dedicated temperature sensing element may be integrated on thesubstrate and configured to sense local temperature of the resonatorstructure. This provides the advantage that the dependency orcharacteristic between frequency and temperature of the resonatorstructure can be measured continuously and the stored characteristic canbe adapted at a predetermined timing.

As an example, the temperature sensing element may comprise at least onedoped region of the substrate. Similarly, the at least one controllableheating element may comprise at least one doped region of the substrate.

The at least one controllable heating element may comprises at least onemetal strip pattern integrated on the substrate. Of course, any otherstructure or pattern, such as a thin film or thick film or semiconductorpattern or the like may be used to obtain the integrated heatingelement.

The resonator structure may be a BAW resonator structure or a SAWresonator structure or any other integrated resonator structure with anacoustically active part.

Furthermore, the control means of the temperature control apparatus maybe adapted to read values of sampling points at a predetermined timing,and to update the stored information using the read values.

The temperature characteristic may be derived from sampling pointsmeasured during manufacture of the resonator structure. A sensedtemperature value obtained from an optional temperature sensing elementmay be used to update the stored temperature characteristic at apredetermined timing.

Further advantageous modifications are described below.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will now be described based on embodiments withreference to the accompanying drawings in which:

FIG. 1 shows a schematic cross section of a conventional resonatorstructure;

FIG. 2 shows a schematic cross section of a resonator structure withtemperature drift compensation according to a first embodiment;

FIG. 3 shows a schematic diagram indicating a temperature behavior of adiode voltage;

FIG. 4 shows a schematic characteristic indicating a temperaturedependency of a resonator frequency;

FIG. 5 shows a schematic diagram indicating temperature-dependentvariation of turnover point of an SAW resonator;

FIG. 6 shows a schematic circuit diagram of an SAW resonator withtemperature drift compensation according to a second embodiment; and

FIG. 7 shows a schematic block diagram of a temperature controlarrangement according to the first and second embodiments.

DESCRIPTION OF THE EMBODIMENTS

In the following, embodiments of the present invention will be describedin more detail based on specific BAW and SAW resonator structures.

There are a two implementation examples where the embodiments describedhereinafter can be used. Firstly in a reference oscillator, to replace aconventional crystal, and secondly in local oscillator circuits fortransmission/reception (TX/RX) frequency generation. Both cases requirean accurate and well-defined temperature behavior. The pure resonator isuseful directly for oscillator purposes, so that the present inventionenables more accurate oscillator circuits.

In particular, the below embodiments could be used in a crystal-lessoscillator used as a reference oscillator circuit of an RF transceiveras described for example in WO2004/045101A1 and which can be used inmobile phones or mobile terminals for wireless networks

The preferred first embodiment relates to a BAW structure, particularlya Solidly Mounted Resonator (SMR) structure for use e.g. in anoscillator circuit with differential topology. The differential topologyis more robust and not as sensitive as a single-end topology where oneport or terminal of the resonator structure is connected to a fixedpotential. In particular, the first embodiments may be focused on a useof the SMR structure as an oscillator tank circuit. This kind ofoscillator is commonly useful for reference purposes, when phase noiserequirements are very tight. Thereby, conventional crystal-basedoscillators can be replaced by BAW-based oscillators.

However, the first embodiment may as well be implemented in an FBARstructure. In the present specification, the designation “FBAR” isintended to define a topology, where both sides of active parts areisolated with air. Thus, in FBAR structures, active parts are arrangedin a floating manner between two air cavities.

According to the first embodiment, at least one first doped region ofthe substrate of the resonator structure is provided as a heatingelement of a control circuit for controlling the temperature of theresonator structure. Additionally, the at least one first doped regionmay by used as a sensor element for measuring local temperature at theresonator structure. As an alternative, at least one second doped regionof said substrate may be provided as a sensor element (such as a sensordiode) for measuring local temperature at the resonator structure.

FIG. 2 shows a schematic cross section of a BAW resonator similar toFIG. 1 with additional temperature drift compensation. In particular, aheating-type drift compensation for a BAW resonator is shown. As anexample, four heating resistors 15-1 to 15-4 are provided in thesubstrate below the integrated BAW resonator structure and function asdiffusion resistors. Furthermore, a sensor diode 13 can be added tomeasure the temperature of the BAW resonator structure. Both heatingresistors 15-1 to 15-4 and sensor diode 13 may be obtained by providingN+ doped regions in a P-doped substrate. The sensor diode 13 is used asa forward biased diode. A constant current is driven or flows throughthe sensor diode 13 and a voltage drop at the sensor diode 13 isdetected and compared to a reference voltage. Based on the comparisonresult, a predetermined heating current or voltage is applied to theheating resistors so as to heat the BAW resonator structure to apredetermined temperature value which corresponds to the referencevoltage. Thereby, the BAW resonator structure can be controlled tomaintain a predetermined temperature and thus a predetermined centerfrequency. The required control parameters (e.g. reference voltage,center frequency etc.) can be programmed or stored during themanufacturing process of the BAW resonator structure.

FIG. 3 shows a schematic diagram of a temperature dependency of thediode voltage (threshold voltage) V_(D) of the sensor diode 13 at aconstant feed forward current (bias current) of e.g. 50 μA. The selectedcurrent value depends on the size of sensor diode 13. As can be gatheredfrom FIG. 3, the substantially linear temperature dependency providesfor relatively accurate temperature measurements in the linear range ofthe diagram.

As already mentioned, the temperature drift compensation, which may be atouch temperature compensation of a mobile phone or other mobilecommunication device, may be implemented by a doped N region providedbelow or near the BAW resonator structure and used as the sensor diode13 for sensing the temperature. Additionally, another or other doped Nregion(s) is(are) provided below or near the BAW resonator structure asheating elements or resistors 15-1 to 15-4 to increase the temperatureof the BAW resonator structure and optionally to control frequency ofthe BAW resonator structure.

The heating elements or resistors 15-1 to 15-4 may advantageously beused to set temperature of the resonator structure on factory line forenabling an accurate frequency calibration. Additionally, therebygathered sampling points over the performed temperature sweep, forexample from +20 deg C. up to +100 deg C., could be stored to a memoryas an RAM. Same kind of calibration could further be used, when afrequency drift outside the control range takes place, then are-calibration may be done during service or by implementedself-calibration functionality. Thus, it would also be possible to takeinto account frequency drifts, which are due to aging. Anotherapplication of the heating elements or resistors 15-1 to 15-4 may be toheat the resonator structure during normal use. For instance, whenambient temperature of the mobile is low (e.g. −30 deg C.) it would bepossible to keep the temperature by heating of the resonator structureat room temperature, that is around +20 deg C. and where the lowestsampling point during fabrication of the mobile on factory line mighthave been read. Then, there would be no need for any calibration attemperatures lower than room temperature. In particular, the resonatorstructure needs no freezing during factory line calibration.

As an alternative example, a doped N region may be provided as aresistor element below or near the BAW resonator structure, whichresistor element serves both as heating element and sensing element formeasuring the local temperature based on its temperature coefficient.

When a mobile phone is switched on, temperature and oscillator frequencyare unknown parameters, so that initial compensation is a problem. Asolution could be an accurate preliminary temperature measurement andestimation of parameters of the oscillator from a table stored in amemory, e.g., a Random Access Memory (RAM) or the like. As analternative solution, a forced temperature can be applied to the BAWresonator.

FIG. 4 shows a schematic characteristic indicating an exemplarytemperature dependency of a resonator frequency. This characteristiccurve can be sampled at predetermined sampling points SP. The number ofsampling points can be selected arbitrarily, e.g. as many as needed. Dueto the fact that the heating element(s) and sensor element(s) areintegrated close to the resonator itself, all heating power is focuseddirectly to the resonator structure. Sampling can thus be done with afast power sweep over the whole desired temperature range. The obtainedsampling points can be stored in a memory device (e.g. RAM table)provided at a temperature control unit (as explained later).

An alternative approach for obtaining a symmetrical resonator structuremay be used, wherein two resonator structures (each structured as shownin FIG. 2) are combined to obtain a symmetrical overall resonatorstructure as a differential tank circuit, which can be used indifferential circuit environments. The two resonator structures can beconnected to each other in an anti-parallel manner. That is, the bottomelectrode of a first temperature-controlled resonator structure isconnected to the top electrode of a second temperature-controlledresonator structure and vice versa. The first and second resonatorstructures may be integrated on the same substrate.

As another alternative, the two resonator structures (each structured asshown in FIG. 2) are connected to each other in an anti-serial manner.That is, the bottom electrodes of a first resonator structure isconnected to the bottom electrode of a second resonator structure andtwo respective ports are provided at the respective top electrodes.Again, the first and second temperature-controlled resonator structuresmay be integrated on the same substrate, so that deviation of centerfrequency is as small as possible.

The proposed temperature-controlled BAW structure may be incorporated inan oscillator bridge configuration comprising a first and seconddifferential transistor pairs. The resonator structure may then beconnected in a differential topology and diagonally across the bridgeconfiguration at the source terminals of the transistor pairs. Thisexample is suitable for a parallel mode oscillator, where the BAWstructure is operated at its parallel resonance. A current source isprovided to generate a bias current for the differential transistorpairs. Differential oscillator types are more robust to environmentalchanges.

The temperature-controlled BAW structure according to the above firstembodiment can be fabricated on silicon (Si), gallium arsenide (GaAs),glass, or ceramic substrates. One ceramic substrate type, which iswidely used, is alumina. Furthermore, it can be manufactured usingvarious thin film manufacturing techniques, such as for examplesputtering, vacuum evaporation or chemical vapor deposition.

The resonance frequency may range for example from 0.5 GHz to severalGHz, depending on the size and materials of the BAW structure. BAWsexhibit the typical series and parallel resonances of crystalresonators. The resonance frequencies are determined mainly by thematerial of the resonator and the dimensions of the layers of theresonator.

The piezoelectric layer or film 160 of the active part(s) may be forexample, ZnO, AIN, ZnS or any other piezoelectric material (orcombination of them since temperature behavior is possible to controlwith two different piezoelectric materials) that can be fabricated as athin film. As a further example, also ferroelectric ceramics can be usedas the piezoelectric material. For example, PbTiO₃ andPb(Zr_(x)Ti_(1−x))O₃ and other members of the so called lead lanthanumzirconate titanate family can be used.

The material used to form the electrode layers can be an electricallyconductive material having a high acoustic impedance. The electrodes maybe comprised of for example any suitable metal, such as tungsten (W),aluminum (Al), copper (Cu), molybdenum (Mo), nickel (Ni), titanium (Ti),niobium (Nb), silver (Ag), gold (Au), and tantalum (Ta).

The acoustical isolation, as obtained by the acoustic mirror structure18 of the above embodiments, can be obtained for example by alternativetechniques, such as a substrate via-hole or a micromechanical bridgestructure. However, the invention is not limited to these threetechniques, since any other way of isolating the resonator from thesubstrate can be used as well.

In the via-hole and bridge structures of FBAR-type resonators, theacoustically reflecting surfaces are the air interfaces below and abovethe FBAR structure. The bridge structure is typically manufactured usinga sacrificial layer, which is etched away to produce a free-standingstructure. Use of a sacrificial layer makes it possible to use a widevariety of substrate materials, since the substrate does not need to bemodified very much, as in the via-hole structure.

The acoustical mirror structure performs the isolation by reflecting theacoustic wave back to the resonator structure. The acoustical mirror 18of the embodiments typically comprises several layers having a thicknessof one quarter wavelength at the center frequency, alternating layershaving differing acoustical impedances. The number of layers in anacoustic mirror is an odd integer, typically ranging from three to nine.The ratio of acoustic impedance of two consecutive layers should belarge in order to present as low an acoustic impedance as possible tothe FBAR, instead of the relatively high impedance of the substratematerial. The material of the high impedance layers can be for examplegold (Au), molybdenum (Mo), or tungsten (W), and the material of the lowimpedance layers can be for example silicon (Si), polysilicon (poly-Si),silicon dioxide (SiO₂), aluminum (Al), or a polymer. Since in structuresutilizing an acoustical mirror structure, the resonator is isolated fromthe substrate and the substrate is not modified very much, a widevariety of materials can be used as a substrate.

The polymer layer may be comprised of any polymer material having a lowloss characteristic and a low acoustic impedance. Preferably, thepolymer material is such that it can withstand temperatures of at least350° C., since relatively high temperatures may be achieved duringdeposition of other layers of the acoustical mirror structure and otherstructures. The polymer layer may be comprised of, by example,polyimide, cyclotene, a carbon-based material, a silicon-based materialor any other suitable material.

In the following, the second preferred embodiment is described on thebasis of an SAW resonator technology. SAW resonator devices exhibit goodQ factor in the range of approximately 5000 to 8000, sometimes even over10000, which means that good selectivity can be achieved due to steepfilter flanks. The temperature dependence of SAW resonator devices is ofa second-order type.

FIG. 5 shows a schematic diagram indicating temperature-dependentvariation of turnover point of an SAW resonator device. The verticalaxis indicates the frequency variation Df in ppm (parts per million) andthe horizontal axis indicates the temperature measured in ° C. In theexample of FIG. 5, three parabolic turnover curves are shown, whichrepresent a temperature variation from +30° C. to +60° C. Specifically,the left turnover curve relates to a resonator operating temperature of+30° C., the middle turnover curve relates to a resonator operatingtemperature of +45° C., and the right turnover curve relates to aresonator operating temperature of +60° C.

In the present second embodiment, a similar temperature control orcompensation as in the first embodiment can be implemented. The interiortemperature of the SAW resonator, e.g. substrate or active part, iscontrolled based on predetermined sampling points SP measured orobtained from the temperature characteristic of the SAW resonatordevice. In FIG. 5, a number of fictional sampling points SP is shown.Based on a couple of such sampling points SP it is possible to model thewhole temperature dependency of the SAW resonator device. The samplingpoints SP can be obtained during manufacturing of the SAW resonatordevice in factory or from time to time during usage by the end user.Thereby, temperature curves based on which temperature control isachieved can be calibrated once during manufacturing and/or periodicallyduring usage.

FIG. 6 shows a schematic circuit diagram of an SAW resonator withtemperature drift compensation according to a second embodiment. In theexample of FIG. 6, one possible example of integrated heating elements55 is shown. Both the number and type of heating elements may vary inthe second embodiment and of course also in the first embodiment. In thepresent exemplary case, three heating elements 55 are provided, whichare made of metal strips arranged in a meander pattern on a substrate 50which may be made of a piezoelectric material. The metal strip itselfcan also be used as a temperature sensor, because its resistance dependson the temperature.

Specifically, the resistance of the metal strip can be calculated asfollows:

$R = {\rho \cdot \frac{l}{A}}$

where R denotes the resistance [ohm], ρ denotes the resistivity [Ωm] ofthe metal, I denotes the length of strip [m], and A denotescross-sectional area [mm²]. The temperature dependency of theresistivity ρ can be expressed as follows:

ρ=ρ₀·[1+α·(t−t _(nom))]

where α denotes the temperature factor of resistivity [1/° C.], tdesignates the temperature [° C.], and t_(nom) designates a nominalreference temperature (i.e. room temperature of 20° C.). E.g., ρ=27.2e−9 Ωm and α=4 e−3 1/° C. in case of aluminum.

Based on the above equations, the required size and/or structure of theheating elements 55 can be determined to obtain desired heat generatingand heat sensing capabilities. The heating elements can be supplied witha heating current I_(H), which may be controlled based on the storedtemperature characteristic obtained e.g. from the sampling points SP. Inthe present example, the heating elements 55 are connected in series.However, they may as well be connected in parallel and/or to apredetermined heating voltage.

According to FIG. 6, an input voltage Vin of the resonator device isapplied to a first comb-shaped electrode pattern 52 which together withan interlaced second comb-shaped electrode pattern 56 forms a firstinter digital transformer (IDT). The first IDT 56 converts theelectrical signal into a mechanical vibration or wave which propagatesas a surface acoustic wave Γ in opposite directions along the substrate50. One component of the acoustic wave which propagates to the left sideis reflected back at a first reflection pattern 58 and propagates in theopposite direction. The other component which originally propagates inthe right direction passes a second IDT which also consists of first andsecond interlaced comb-shaped electrode patterns 52, 56 and is convertedback into an electrical current signal supplied to a load resistor RLwhich may represent the input impedance of a following processing stage.Having passed the second IDT, the second component of the surfaceacoustic wave is also reflected at a second reflector pattern 58 at theright end of the substrate 50. Thereby, two components are continuouslyreflected back and forth and interact with each other in an active partbetween the two TDTs in a positive or negative manner depending on theirfrequency. Only at a predetermined resonance frequency, positiveinteraction generates a resonance effect and the resonator transfersenergy to its output. Otherwise, the two wave components suppress eachother so that no or only a weak output signal is generated at the rightIDT.

By suitable control of the heating current supplied to the heatingelements 55, the substrate temperature can be controlled to compensatetemperature drifts of the SAW resonator.

The above temperature-controlled resonator structures according to thefirst and second embodiments can be implemented, for example, in areceiver part of a mobile communication means where an oscillator blockmay comprise an oscillator circuit with a temperature-controlledresonator structure according to the above first and second embodiments.The temperature-controlled BAW and SAW resonators according to the firstand second embodiments may be located on a separate chip next to an RFchip of the mobile communication means or they may be flipped over theRF chip.

FIG. 7 shows a schematic block diagram of a temperature controlarrangement according to the first and second embodiments. On theresonator substrate 50, heating elements 55 and sensing elements 57 areintegrated e.g. as explained above in connection with the first andsecond embodiments. However, any other kind, type or structure ofheating and sensing elements can be used, which is suitable to beintegrated in or on the substrate 50. As a specific example, the heatingelement(s) 55 and sensing element(s) 57 of FIG. 7 may be implemented by(an) element(s) of a single kind with a sensing and heating function. Asuitable temperature control signal 130, e.g. heating voltage or heatingcurrent, is generated using a predetermined control routine. A measuringor sensing signal 120 which indicates the measured temperature isgenerated at the sensing element(s) 57 and supplied to a temperaturecontrol unit 100. Based on this sensing signal 120 sampling points SPare derived to obtain the resonator's temperature characteristic. Thesampling points SP or a look-up table defining the temperature controlcharacteristic may be stored in a memory device 110, e.g., a RAM or anyother re-writable or writable memory, for later control purposes duringimplementation of the resonator circuit.

It is thus possible to find out dependencies between frequency andtemperature by measuring a resonator temperature using integratedsensing elements 57, which may be dedicated elements or heating elements55 with additional sensing function. The method is quite accurate,because the suggested heating and sensing elements 55, 57 are integratedon the same substrate 50 and thus very close to the resonator itself.Possible variation of characteristics of sensing elements 57, heatingelements 55 and/or resonator can be compensated by suitable initialand/or periodical calibration of every sample device.

In summary, a resonator structure, temperature compensation method andtemperature control apparatus have been described for controlling localtemperature of a resonator structure. At least one heating element isintegrated on a substrate of the resonator structure, and a temperaturecontrol signal generated based on a stored temperature characteristic isapplied to the at least one integrated heating element. Thereby, the atleast one heating element and an optional integrated sensing element canbe provided very close to the resonator. It is thus possible to controlor calibrate variations of sensing elements, heating elements andresonator out from every sample. For example, after calibration, theresonator frequency may be (also) controlled by a phase rotationcircuit. The current flowing through the at least one integrated heatingelement increases the temperature of the resonator. The integratedsensor measures the temperature of the resonator and a factorycalibration forces a frequency correction e.g. by adding a controlledphase shifter (e.g. adjustable capacitor network) in the oscillatorfeedback loop. Corresponding control data may be stored in a RAM table,e.g. phase shifter control bits and/or control voltage versus sensortemperature. Of course, it is possible to control the resonator alsoduring operation, by means of the heating elements.

It is to be noted that the present invention is not restricted to theabove embodiments and can be implemented in any integrated circuitstructure. Furthermore, the sensing elements of the above first andsecond embodiments may be combined or exchanged. Moreover, the presentinvention can be implemented in other BAW based components as well,which are made similar of substrate structures as BAW (example MEMSresonators). The embodiments may thus vary within the scope of theattached claims.

1. A temperature control apparatus for controlling local temperature ofa resonator structure, said apparatus comprising: a) a memory forstoring information about a temperature characteristic of said resonatorstructure; and b) a control for generating a temperature control signalbased on said stored information, and for applying said control signalto an integrated heating element of said resonator structure.
 2. Anapparatus according to claim 1, wherein said control is adapted to readvalues of sampling points at a predetermined timing, and to update saidstored information using said read values.
 3. A method of compensatingtemperature variations in a resonator structure, said method comprising:a) integrating at least one heating element on a substrate of saidresonator structure, b) applying a temperature control signal to said atleast one integrated heating element to obtain a temperaturecharacteristic, and c) storing said temperature characteristic of saidresonator structure.
 4. A method according to claim 3, furthercomprising deriving said temperature characteristic from sampling pointsmeasured during manufacture of said resonator structure.
 5. A methodaccording to claim 4, further comprising integrating a temperaturesensing element on said substrate, and using a sensed temperature valueobtained from said temperature sensing element to update said storedtemperature characteristic at a predetermined timing.